IAUC120N04S6N010ATMA1 vs IAUCN04S7N019GATMA1 Comparación
Comparación detallada lado a lado de IAUC120N04S6N010ATMA1 por Infineon y IAUCN04S7N019GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ ActivoInfineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N04S6N010ATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,68 | $0,82 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | — |
| Encapsulado | PG-TDSON-8-34 (5x6 mm leadless) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per family datasheet) |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | [DATA_NEEDED: junction temperature range from datasheet] |
| Nivel MSL | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | — |
| Estado RoHS | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Lead-Free | — | Yes |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |