IAUC120N04S6N010ATMA1 vs IAUCN04S7N019GATMA1 对比

详细并排对比 IAUC120N04S6N010ATMA1 出自 Infineon 和 IAUCN04S7N019GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ 量产中

规格对比

参数 IAUC120N04S6N010ATMA1 IAUCN04S7N019GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $0.82
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 40 V —
Continuous Drain Current (Id, Tc) 150 A —
Power Dissipation (Pd, Tc) 150 W —
RDS(on) at VGS=10V (typ) 1.0 mΩ —
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ —
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA) —
Technology OptiMOS 6 —
封装 PG-TDSON-8-34 (5x6 mm leadless) PG-THSOG-4-1 (SSO4G 5x6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 (per family datasheet)
工作温度范围 -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) [DATA_NEEDED: junction temperature range from datasheet]
MSL 等级 1 (per JEDEC J-STD-020, per Infineon TDSON family) —
RoHS 状态 Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec —
Polarity Single N-channel —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

数据手册与资源

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