IAUC120N06S5L015ATMA1 vs IAUC120N06S5N011ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L015ATMA1 por Infineon y IAUC120N06S5N011ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoInfineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5L015ATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $1,62 |
| Technology | N-Channel MOSFET (OptiMOS 5) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) | -55°C to +175°C (Tj) |
| Encapsulado | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Tipo de montaje | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 120 A (Tc=25°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | — | 310 A (Tj) |
| On-Resistance Rds(on) max | — | 1.1 mΩ at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | — | 188 W (Tc=25°C) |
| RoHS Compliance | — | Compliant |