IAUC120N06S5L015ATMA1 vs IAUC120N06S5N011ATMA1 对比

详细并排对比 IAUC120N06S5L015ATMA1 出自 Infineon 和 IAUC120N06S5N011ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中
Infineon
IAUC120N06S5N011ATMA1 IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon

IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon

IAUC120N06S5N011ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5L015ATMA1 IAUC120N06S5N011ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.92 $1.62
Technology N-Channel MOSFET (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
工作温度范围 -55C to +175C (Tj) -55°C to +175°C (Tj)
封装 PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-53 (SSO8 5x6 mm)
安装类型 Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Gate-Source Voltage (VGS) max ±20 V —
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) — 120 A (Tc=25°C, Vgs=10V)
Pulsed Drain Current (Idm) — 310 A (Tj)
On-Resistance Rds(on) max — 1.1 mΩ at Vgs=10 V
Gate-Source Voltage (Vgs) max — ±20 V
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total value]
Power Dissipation (Pd) — 188 W (Tc=25°C)
RoHS Compliance — Compliant

数据手册与资源

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