IAUC120N06S5L015ATMA1 vs IAUC120N06S5N011ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L015ATMA1 by Infineon and IAUC120N06S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveInfineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L015ATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.62 |
| Technology | N-Channel MOSFET (OptiMOS 5) | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc=25C) | 235 A | β |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΞ© | β |
| Gate Charge (Qg, typ) | 88 nC | β |
| Power Dissipation (PD, Tc=25C) | 167 W | β |
| Operating Temperature Range | -55C to +175C (Tj) | -55Β°C to +175Β°C (Tj) |
| Package | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Mounting Type | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | β |
| Typical Application | Automotive DC-DC, battery switches, motor drives | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) | β | 120 A (Tc=25Β°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | β | 310 A (Tj) |
| On-Resistance Rds(on) max | β | 1.1 mΞ© at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | β | 188 W (Tc=25Β°C) |
| RoHS Compliance | β | Compliant |