IAUC120N06S5L032ATMA1 vs BSC014N06NSATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L032ATMA1 por Infineon y BSC014N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUC120N06S5L032ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) | OptiMOS 5 |
| Tipo de transistor | N-Channel, Enhancement Mode | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| Encapsulado | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C (T_j) | -55C to +150C |
| Technology | OptiMOS 5 Trench | OptiMOS 5 (shielded-gate trench) |
| AEC-Q101 Qualified | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |