IAUC120N06S5L032ATMA1 vs IPD031N06L3GATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L032ATMA1 por Infineon y IPD031N06L3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ ActivoInfineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5L032ATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 (60 V) | — |
| Tipo de transistor | N-Channel, Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| Encapsulado | PG-TDSON-8-34 (5x6 mm) | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C (T_j) | -55°C to +175°C |
| Technology | OptiMOS 5 Trench | MOSFET (Metal Oxide) |
| AEC-Q101 Qualified | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (Unlimited) |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| Maximum Power Dissipation (PD) at TC=25°C | — | 167 W |
| RDS(on) Max at VGS=10V | — | 3.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | — | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typical value] |
| Series | — | OptiMOS 3 |