IAUC120N06S5L032ATMA1 vs IPD031N06L3GATMA1 对比
详细并排对比 IAUC120N06S5L032ATMA1 出自 Infineon 和 IPD031N06L3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ 量产中规格对比
| 参数 | IAUC120N06S5L032ATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 (60 V) | — |
| 晶体管类型 | N-Channel, Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| 封装 | PG-TDSON-8-34 (5x6 mm) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C (T_j) | -55°C to +175°C |
| Technology | OptiMOS 5 Trench | MOSFET (Metal Oxide) |
| AEC-Q101 Qualified | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (Unlimited) |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| Maximum Power Dissipation (PD) at TC=25°C | — | 167 W |
| RDS(on) Max at VGS=10V | — | 3.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | — | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typical value] |
| Series | — | OptiMOS 3 |