IAUC60N04S6L030HATMA1 vs IAUC50N08S5N102ATMA1 Comparación
Comparación detallada lado a lado de IAUC60N04S6L030HATMA1 por Infineon y IAUC50N08S5N102ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC60N04S6L030HATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,94 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | [DATA_NEEDED: VGS(th) typical value] |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 50 A |
| On-Resistance (RDS(on)) | — | 10.2 mΩ @ 25 A, 10 V |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) | — | 21 nC @ 10 V |
| Input Capacitance (Ciss) | — | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | — | 60 W |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C |
| Encapsulado / Carcasa | — | PG-TDSON-8-33 |
| Qualification | — | AEC-Q101 |