IAUC60N04S6N031HATMA1 vs IAUC100N04S6L025ATMA1 Comparación
Comparación detallada lado a lado de IAUC60N04S6N031HATMA1 por Infineon y IAUC100N04S6L025ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ ActivoInfineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC60N04S6N031HATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,95 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (Tj) | — |
| Encapsulado | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Technology | — | OptiMOS 6 40V trench MOSFET |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Lead-Free | — | Yes |