IAUC60N04S6N031HATMA1 vs IAUC100N04S6L025ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N031HATMA1 by Infineon and IAUC100N04S6L025ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 β ActiveInfineon
IAUC100N04S6L025ATMA1
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6N031HATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | β |
| Process Technology | OptiMOS 6 40V | β |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Tj) | 60 A | β |
| Power Dissipation (P_D, Tc=25C) | 75 W | β |
| R_DS(on) at VGS=10V | 3.1 mΞ© | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Package | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Technology | β | OptiMOS 6 40V trench MOSFET |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | β | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | β | 62 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free | β | Yes |