IAUC60N04S6N044ATMA1 vs IAUC90N10S5N062ATMA1 Comparación
Comparación detallada lado a lado de IAUC60N04S6N044ATMA1 por Infineon y IAUC90N10S5N062ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ ActivoInfineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC60N04S6N044ATMA1 | IAUC90N10S5N062ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,98 | $0,95 |
| Technology | OptiMOS-6 N-channel trench MOSFET | Trench MOSFET (OptiMOS 5, Generation 5) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | -55 C to +175 C |
| Encapsulado | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-34 (TDSON-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited) | — |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 qualified |
| Estado RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 90 A |
| Maximum On-Resistance RDS(on) max at VGS=10V | — | 6.2 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | — | 3.8 V |
| Maximum Power Dissipation (Tc=25C) | — | 115 W |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (260 C peak reflow) |
| RoHS / Green Product | — | Yes (RoHS compliant, Green Product) |
| Lead-Free | — | Yes |