IAUC60N04S6N044ATMA1 vs IAUC90N10S5N062ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N044ATMA1 by Infineon and IAUC90N10S5N062ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ ActiveInfineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUC60N04S6N044ATMA1 | IAUC90N10S5N062ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | OptiMOS-6 N-channel trench MOSFET | Trench MOSFET (OptiMOS 5, Generation 5) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Operating Junction Temperature | -55°C to +175°C | -55 C to +175 C |
| Package | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-34 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | — |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 qualified |
| RoHS Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 90 A |
| Maximum On-Resistance RDS(on) max at VGS=10V | — | 6.2 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | — | 3.8 V |
| Maximum Power Dissipation (Tc=25C) | — | 115 W |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (260 C peak reflow) |
| RoHS / Green Product | — | Yes (RoHS compliant, Green Product) |
| Lead-Free | — | Yes |