IAUC60N04S6N044ATMA1 vs IAUC90N10S5N062ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC60N04S6N044ATMA1 par Infineon et IAUC90N10S5N062ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ ActifInfineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC60N04S6N044ATMA1 | IAUC90N10S5N062ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,98 | $0,95 |
| Technology | OptiMOS-6 N-channel trench MOSFET | Trench MOSFET (OptiMOS 5, Generation 5) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Température de jonction en fonctionnement | -55°C to +175°C | -55 C to +175 C |
| Boîtier | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-34 (TDSON-8) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (unlimited) | — |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 qualified |
| Statut RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 90 A |
| Maximum On-Resistance RDS(on) max at VGS=10V | — | 6.2 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | — | 3.8 V |
| Maximum Power Dissipation (Tc=25C) | — | 115 W |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (260 C peak reflow) |
| RoHS / Green Product | — | Yes (RoHS compliant, Green Product) |
| Lead-Free | — | Yes |