IAUC80N04S6N036ATMA1 vs IAUC60N04S6N044ATMA1 Comparación
Comparación detallada lado a lado de IAUC80N04S6N036ATMA1 por Infineon y IAUC60N04S6N044ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC80N04S6N036ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS-6 40 V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at T_C | 80 A | — |
| Power Dissipation (P_D) at T_C | 50 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm | — |
| On-Resistance R_DS(on) max at V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Encapsulado | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C | — |
| AEC-Q101 Qualification | Qualified (Automotive) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) | — |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) | — |
| Compliance - RoHS | Compliant | — |
| Compliance - REACH | Compliant | — |
| Technology | — | OptiMOS-6 N-channel trench MOSFET |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| Temperatura de unión de funcionamiento | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 qualified (IAUC prefix) |
| Estado RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |