IAUC80N04S6N036ATMA1 vs IAUC60N04S6N044ATMA1 비교

다음의 상세 나란히 비교: IAUC80N04S6N036ATMA1 제조: Infineon 및 IAUC60N04S6N044ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 ✓ 활성

사양 비교

파라미터 IAUC80N04S6N036ATMA1 IAUC60N04S6N044ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.86 $0.98
Manufacturer Infineon Technologies —
Part Family OptiMOS-6 40 V —
Polarity N-Channel —
Drain-Source Voltage (V_DS) 40 V 40 V
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at T_C 80 A —
Power Dissipation (P_D) at T_C 50 W —
On-Resistance R_DS(on) max at V_GS=10V 3.6 mOhm —
On-Resistance R_DS(on) max at V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
패키지 PG-TDSON-8 (SuperSO8 5x6 mm) PG-TDSON-8 (5x6 mm) with exposed pad
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55 C to +175 C —
AEC-Q101 Qualification Qualified (Automotive) —
MSL 레벨 1 (per JEDEC J-STD-020) 1 (unlimited)
Terminal Finish Tin (Sn) (e3 per JESD-609) —
Peak Reflow Temperature 260 C (per JEDEC J-STD-020) —
Compliance - RoHS Compliant —
Compliance - REACH Compliant —
Technology — OptiMOS-6 N-channel trench MOSFET
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
동작 접합 온도 — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
RoHS 상태 — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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