IAUC80N04S6N036ATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of IAUC80N04S6N036ATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon
IAUC80N04S6N036ATMA1 β ActiveInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC80N04S6N036ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS-6 40 V | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at T_C | 80 A | β |
| Power Dissipation (P_D) at T_C | 50 W | β |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm | β |
| On-Resistance R_DS(on) max at V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | β |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | β |
| AEC-Q101 Qualification | Qualified (Automotive) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) | β |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) | β |
| Compliance - RoHS | Compliant | β |
| Compliance - REACH | Compliant | β |
| Technology | β | OptiMOS-6 N-channel trench MOSFET |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Automotive Qualification | β | AEC-Q101 qualified (IAUC prefix) |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |