IAUCN04S7L050HATMA1 vs IAUCN04S7L014ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7L050HATMA1 por Infineon y IAUCN04S7L014ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUCN04S7L050HATMA1 | IAUCN04S7L014ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,83 | $1,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS 5 40V Automotive |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | Single N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Total gate charge Qg] |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | — |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 120 A |
| On-Resistance RDS(on) Max | — | 1.43 mΩ |
| Tensión umbral de puerta | — | [DATA_NEEDED: Gate threshold voltage] |
| Power Dissipation (Pd) | — | [DATA_NEEDED: Power dissipation Pd] |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (typical automotive MOSFET range) |
| Qualification | — | AEC-Q101 (Automotive) |