IAUCN04S7N012ATMA1 vs IAUC60N04S6N031HATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N012ATMA1 por Infineon y IAUC60N04S6N031HATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N012ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $0,95 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS-7 (trench) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ | — |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] | -55 °C to +175 °C (Tj) |
| Encapsulado | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-56 (5 mm x 6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | — |
| Disipación de potencia (Ptot) | [DATA_NEEDED: Ptot at TC=25°C] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: RθJA on JEDEC PCB] | — |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Nivel MSL | 1 | [DATA_NEEDED: MSL rating] |
| Polarity | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Recuento de pines | — | 8 |
| Automotive Qualification | — | AEC-Q101 |