IAUCN04S7N012ATMA1 vs IAUC60N04S6N031HATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N012ATMA1 by Infineon and IAUC60N04S6N031HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 - 40V 1.2mΞ© 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 - 40V 1.2mΞ© 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 βœ“ Active
Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N012ATMA1 IAUC60N04S6N031HATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.95
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS-7 (trench) β€”
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at TC=25Β°C 120 A β€”
On-State Resistance RDS(on) max at VGS=10V 1.2 mΞ© β€”
On-State Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute max] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Operating Temperature Range -55 Β°C to +175 Β°C [DATA_NEEDED: junction temperature max from datasheet] -55 Β°C to +175 Β°C (Tj)
Package PG-TDSON-8-34 (8-PowerTDFN) PG-TDSON-8-56 (5 mm x 6 mm)
Mounting Type Surface Mount Surface Mount
Transistor Grade Automotive (AEC-Q101) β€”
Power Dissipation (Ptot) [DATA_NEEDED: Ptot at TC=25Β°C] β€”
Thermal Resistance RΞΈJA [DATA_NEEDED: RΞΈJA on JEDEC PCB] β€”
RoHS Status Compliant Compliant
Halogen-Free Yes β€”
MSL Level 1 [DATA_NEEDED: MSL rating]
Polarity N-Channel β€”
Manufacturer β€” Infineon Technologies
Part Family β€” IAUC (Integrated Automotive Half-Bridge)
Process Technology β€” OptiMOS 6 40V
Configuration β€” Half-Bridge (2 N-Channel MOSFETs)
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D, Tj) β€” 60 A
Power Dissipation (P_D, Tc=25C) β€” 75 W
R_DS(on) at VGS=10V β€” 3.1 mΞ©
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS max rating]
Pin Count β€” 8
Automotive Qualification β€” AEC-Q101

Datasheets & Resources

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