IAUCN04S7N019GATMA1 vs IAUCN04S7L009ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N019GATMA1 por Infineon y IAUCN04S7L009ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ ActivoInfineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N019GATMA1 | IAUCN04S7L009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 147 A | — |
| On-Resistance RDS(on) typical | 1.95 mOhm | — |
| Maximum Power Dissipation (Tc) | 81 W | — |
| Encapsulado | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-TDSON-8-34 (TDSON EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB | — |
| Automotive Qualification | AEC-Q101 (per family datasheet) | AEC-Q101 qualified |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: junction temperature range from datasheet] | -55 °C to +175 °C (Tj) |
| Part Number | — | IAUCN04S7L009ATMA1 |
| Technology | — | OptiMOS™ 7 (trench-gate) |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id, Tc=25°C) | — | 275 A (Tj) |
| Continuous Drain Current (Id, Tc=100°C) | — | 175 A |
| Power Dissipation (Pd, Tc=25°C) | — | 129 W |
| Rds(on) Max @ Vgs=10V | — | 0.91 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Nivel MSL | — | 1 |