IAUCN04S7N019GATMA1 vs IAUCN04S7L009ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N019GATMA1 by Infineon and IAUCN04S7L009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7N019GATMA1 IAUCN04S7L009ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
Package PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-34 (TDSON EP)
Mounting Type Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 qualified
RoHS Status Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
Operating Temperature Range [DATA_NEEDED: junction temperature range from datasheet] -55 °C to +175 °C (Tj)
Part Number — IAUCN04S7L009ATMA1
Technology — OptiMOS™ 7 (trench-gate)
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id, Tc=25°C) — 275 A (Tj)
Continuous Drain Current (Id, Tc=100°C) — 175 A
Power Dissipation (Pd, Tc=25°C) — 129 W
Rds(on) Max @ Vgs=10V — 0.91 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
MSL Level — 1

Datasheets & Resources

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