IAUZ20N08S5L300ATMA1 vs BSC123N08NS3GATMA1 Comparación
Comparación detallada lado a lado de IAUZ20N08S5L300ATMA1 por Infineon y BSC123N08NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ20N08S5L300ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUZ20N08S5L300ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,81 | $0,71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) | 20 A (Tc) | — |
| Power Dissipation (Pd) | 30 W (Tc) | — |
| On-State Resistance (Rds(on)) | 30 mΩ @ 10 A, 10 V | — |
| Gate Threshold Voltage (Vgs(th)) | ±20 V (max Vgs rating) | — |
| Input Capacitance (Ciss) | 599 pF @ 40 V | — |
| Total Gate Charge (Qg) | 10.5 nC @ 10 V | [DATA_NEEDED: Qg] |
| Temperatura de unión de funcionamiento | -55°C to +175°C | -55C to +150C |
| Encapsulado | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | — |
| Technology | Trench MOSFET (OptiMOS-5) | — |
| Estado RoHS | Compliant | Compliant with exemption |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | — | Yes (AEC-Q101) |