IAUZ20N08S5L300ATMA1 vs BSC123N08NS3GATMA1 비교

다음의 상세 나란히 비교: IAUZ20N08S5L300ATMA1 제조: Infineon 및 BSC123N08NS3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 ✓ 활성
Infineon
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 ✓ 활성

사양 비교

파라미터 IAUZ20N08S5L300ATMA1 BSC123N08NS3GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.81 $0.71
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 —
Polarity N-Channel —
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) 20 A (Tc) —
Power Dissipation (Pd) 30 W (Tc) —
On-State Resistance (Rds(on)) 30 mΩ @ 10 A, 10 V —
Gate Threshold Voltage (Vgs(th)) ±20 V (max Vgs rating) —
Input Capacitance (Ciss) 599 pF @ 40 V —
Total Gate Charge (Qg) 10.5 nC @ 10 V [DATA_NEEDED: Qg]
동작 접합 온도 -55°C to +175°C -55C to +150C
패키지 PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm PG-TDSON-8-1 (SuperSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) —
Technology Trench MOSFET (OptiMOS-5) —
RoHS 상태 Compliant Compliant with exemption
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
MSL 레벨 — 1 (per JEDEC J-STD-020)
Automotive Qualified — Yes (AEC-Q101)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청