IAUZN04S7L025ATMA1 vs IAUCN04S7N037GATMA1 Comparación
Comparación detallada lado a lado de IAUZN04S7L025ATMA1 por Infineon y IAUCN04S7N037GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon
IAUZN04S7L025ATMA1 ✓ ActivoInfineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUZN04S7L025ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | — |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | — |
| Continuous Drain Current (ID) at TC=25C | 117 A | — |
| Continuous Drain Current (ID) at TA | 60 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| RDS(on) Max at VGS=10V | 2.56 mΩ | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 65 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | PG-TSDSON-8-44 (S3O8) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Tipo de montaje | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| AEC-Q100 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | — |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Automotive Qualification | — | AEC-Q101 |
| Estado RoHS | — | Compliant |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |