IAUZN04S7L025ATMA1 vs IAUCN04S7N037GATMA1 비교

다음의 상세 나란히 비교: IAUZN04S7L025ATMA1 제조: Infineon 및 IAUCN04S7N037GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 ✓ 활성

사양 비교

파라미터 IAUZN04S7L025ATMA1 IAUCN04S7N037GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.89 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 —
Technology N-Channel Trench MOSFET Trench MOSFET, N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 65 W —
동작 접합 온도 -55C to +175C —
패키지 PG-TSDSON-8-44 (S3O8) SSO4G 5x6 mm² (PG-THSOG-4-1)
실장 유형 Surface Mount Surface Mount (IMS substrate attach compatible)
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Series — OptiMOS 7
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Automotive Qualification — AEC-Q101
RoHS 상태 — Compliant
동작 온도 범위 — [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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