IAUZN04S7L025ATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUZN04S7L025ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN04S7L025ATMA1
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΞ© OptiMOS 7 MOSFET | Infineon
IAUZN04S7L025ATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUZN04S7L025ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | β |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | β |
| Continuous Drain Current (ID) at TC=25C | 117 A | β |
| Continuous Drain Current (ID) at TA | 60 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | β |
| RDS(on) Max at VGS=10V | 2.56 mΞ© | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25C | 65 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TSDSON-8-44 (S3O8) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| AEC-Q100 Qualification | Qualified (automotive grade) | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | β |
| Series | β | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| Automotive Qualification | β | AEC-Q101 |
| RoHS Status | β | Compliant |
| Operating Temperature Range | β | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |