IGB30N60H3ATMA1 vs IGW30N60H3FKSA1 Comparación
Comparación detallada lado a lado de IGB30N60H3ATMA1 por Infineon y IGW30N60H3FKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IGB30N60H3ATMA1 | IGW30N60H3FKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $2,49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous DC Collector Current (IC, TC=25C) | 60 A | — |
| Pulsed Collector Current (ICpuls) | [DATA_NEEDED: pulsed collector current value] | — |
| Disipación de potencia (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | +/- 20 V | ±20 V (max) |
| Tensión de saturación colector-emisor (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| Turn-Off Time (toff) | 262 ns (nominal) | — |
| Technology | Trench Field Stop | — |
| Configuration | Single IGBT | — |
| Encapsulado | PG-TO263-3-2 (D2PAK) | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Tipo de montaje | Surface Mount | Through Hole |
| Temperatura de unión de funcionamiento | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Terminal Form | Gull Wing | — |
| Recuento de pines | 3 (2 + Tab) | — |
| Estado RoHS | Compliant | Compliant |
| Switching Behavior | MOSFET-like turn-off | — |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | — | 600 V |
| Continuous Collector Current (IC, TC=25°C) | — | 60 A |
| Continuous Collector Current (IC, TC=100°C) | — | [DATA_NEEDED: IC at TC=100°C] |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 187 W |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | — | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | — | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| Rango de temperatura de unión de funcionamiento | — | -40 °C to +175 °C |
| Anti-Parallel Diode | — | None (co-packaged without diode) |