IGB30N60H3ATMA1 vs IGW30N60H3FKSA1 Comparaison
Comparaison détaillée côte à côte de IGB30N60H3ATMA1 par Infineon et IGW30N60H3FKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IGB30N60H3ATMA1 | IGW30N60H3FKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $2,49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous DC Collector Current (IC, TC=25C) | 60 A | — |
| Pulsed Collector Current (ICpuls) | [DATA_NEEDED: pulsed collector current value] | — |
| Dissipation de puissance (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | +/- 20 V | ±20 V (max) |
| Tension de saturation collecteur-émetteur (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| Turn-Off Time (toff) | 262 ns (nominal) | — |
| Technology | Trench Field Stop | — |
| Configuration | Single IGBT | — |
| Boîtier | PG-TO263-3-2 (D2PAK) | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Type de montage | Surface Mount | Through Hole |
| Température de jonction en fonctionnement | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Terminal Form | Gull Wing | — |
| Nombre de broches | 3 (2 + Tab) | — |
| Statut RoHS | Compliant | Compliant |
| Switching Behavior | MOSFET-like turn-off | — |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | — | 600 V |
| Continuous Collector Current (IC, TC=25°C) | — | 60 A |
| Continuous Collector Current (IC, TC=100°C) | — | [DATA_NEEDED: IC at TC=100°C] |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 187 W |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | — | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | — | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| Plage de température de jonction en fonctionnement | — | -40 °C to +175 °C |
| Anti-Parallel Diode | — | None (co-packaged without diode) |