IGB30N60H3ATMA1 vs IGW30N60H3FKSA1 Comparison
Detailed side-by-side comparison of IGB30N60H3ATMA1 by Infineon and IGW30N60H3FKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGB30N60H3ATMA1 | IGW30N60H3FKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $2.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 | β |
| Collector-Emitter Voltage (VCE) | 600 V | β |
| Continuous DC Collector Current (IC, TC=25C) | 60 A | β |
| Pulsed Collector Current (ICpuls) | [DATA_NEEDED: pulsed collector current value] | β |
| Power Dissipation (Ptot) | 187 W | β |
| Gate-Emitter Voltage (VGE) | +/- 20 V | Β±20 V (max) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) | β |
| Gate-Emitter Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | β |
| Turn-Off Time (toff) | 262 ns (nominal) | β |
| Technology | Trench Field Stop | β |
| Configuration | Single IGBT | β |
| Package | PG-TO263-3-2 (D2PAK) | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Mounting Type | Surface Mount | Through Hole |
| Operating Junction Temperature | -40C to +175C | β |
| Storage Temperature | -55C to +150C | β |
| Terminal Form | Gull Wing | β |
| Pin Count | 3 (2 + Tab) | β |
| RoHS Status | Compliant | Compliant |
| Switching Behavior | MOSFET-like turn-off | β |
| Series | β | TRENCHSTOP IGBT3 |
| IGBT Type | β | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | β | 600 V |
| Continuous Collector Current (IC, TC=25Β°C) | β | 60 A |
| Continuous Collector Current (IC, TC=100Β°C) | β | [DATA_NEEDED: IC at TC=100Β°C] |
| Pulsed Collector Current (ICM) | β | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | β | 187 W |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | β | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25Β°C | β | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | β | [DATA_NEEDED: Eoff value] |
| Operating Junction Temperature Range | β | -40 Β°C to +175 Β°C |
| Anti-Parallel Diode | β | None (co-packaged without diode) |