IGLR70R270D2SXUMA1 vs IGI65D1414A3MSXUMA1 Comparación
Comparación detallada lado a lado de IGLR70R270D2SXUMA1 por Infineon y IGI65D1414A3MSXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ ActivoInfineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IGLR70R270D2SXUMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,13 | $4,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | CoolGaN™ HEMT |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | Enhancement-mode GaN HEMT (eMode) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| Encapsulado | PG-TSON-8-8 (ThinPAK) | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| Estado RoHS | Compliant | — |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| Configuration | — | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |