IGLR70R270D2SXUMA1 vs IGI65D1414A3MSXUMA1 비교

다음의 상세 나란히 비교: IGLR70R270D2SXUMA1 제조: Infineon 및 IGI65D1414A3MSXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IGLR70R270D2SXUMA1 IGI65D1414A3MSXUMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.13 $4.95
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 CoolGaN™ HEMT
Technology Gallium Nitride (GaN) HEMT, enhancement-mode Enhancement-mode GaN HEMT (eMode)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID, Tc) 7.3 A —
Power Dissipation (PD, Tc) 28 W —
On-State Resistance (RDS(on), typ.) 270 mΩ —
패키지 PG-TSON-8-8 (ThinPAK) PG-TIQFN-32-1 (QFN-32, 6x8 mm)
실장 유형 Surface Mount Surface Mount
Gate Drive 0 to 12 V (enhancement-mode, internal gate diode) —
Wafer Process 200 mm (8-inch) GaN-on-Si —
RoHS 상태 Compliant —
동작 온도 범위 -40C to +150C (junction) [DATA_NEEDED: operating temperature range]
Reverse Recovery Charge (Qrr) 0 nC (no body diode) —
Configuration — Half-Bridge (2 FETs in QFN-32, high-side + low-side)
Drain-Source Voltage (V_DS, max) — 650 V
On-Resistance (R_DS(on), typ) — 140 mΩ per FET
Continuous Drain Current — 13.7 A (per Newark listing)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Total Gate Charge (Q_G, typ) — [DATA_NEEDED: Q_G total]
Output Charge (Q_OSS) — [DATA_NEEDED: Q_OSS value]
Reverse Recovery Charge (Q_RR) — 0 nC (intrinsic to GaN HEMT, no body diode recovery)
Thermal Resistance (R_thJA) — [DATA_NEEDED: R_thJA value]
Typical Applications — AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting
MSL 레벨 — [DATA_NEEDED: MSL level]
RoHS Compliance — Compliant

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