IGLR70R270D2SXUMA1 vs IGI65D1414A3MSXUMA1 对比

详细并排对比 IGLR70R270D2SXUMA1 出自 Infineon 和 IGI65D1414A3MSXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IGLR70R270D2SXUMA1 IGI65D1414A3MSXUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.13 $4.95
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 CoolGaN™ HEMT
Technology Gallium Nitride (GaN) HEMT, enhancement-mode Enhancement-mode GaN HEMT (eMode)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID, Tc) 7.3 A —
Power Dissipation (PD, Tc) 28 W —
On-State Resistance (RDS(on), typ.) 270 mΩ —
封装 PG-TSON-8-8 (ThinPAK) PG-TIQFN-32-1 (QFN-32, 6x8 mm)
安装类型 Surface Mount Surface Mount
Gate Drive 0 to 12 V (enhancement-mode, internal gate diode) —
Wafer Process 200 mm (8-inch) GaN-on-Si —
RoHS 状态 Compliant —
工作温度范围 -40C to +150C (junction) [DATA_NEEDED: operating temperature range]
Reverse Recovery Charge (Qrr) 0 nC (no body diode) —
Configuration — Half-Bridge (2 FETs in QFN-32, high-side + low-side)
Drain-Source Voltage (V_DS, max) — 650 V
On-Resistance (R_DS(on), typ) — 140 mΩ per FET
Continuous Drain Current — 13.7 A (per Newark listing)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Total Gate Charge (Q_G, typ) — [DATA_NEEDED: Q_G total]
Output Charge (Q_OSS) — [DATA_NEEDED: Q_OSS value]
Reverse Recovery Charge (Q_RR) — 0 nC (intrinsic to GaN HEMT, no body diode recovery)
Thermal Resistance (R_thJA) — [DATA_NEEDED: R_thJA value]
Typical Applications — AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting
MSL 等级 — [DATA_NEEDED: MSL level]
RoHS Compliance — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价