IKD06N60RATMA1 vs IGD06N60TATMA1 Comparación
Comparación detallada lado a lado de IKD06N60RATMA1 por Infineon y IGD06N60TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IKD06N60RATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | Transistors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $0,62 |
| Tipo de transistor | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | — |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | ±20 V |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | — |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) | — |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK / TO-252) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (2 + Tab) | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Temperatura de unión de funcionamiento | — | -40 °C to +175 °C |
| Storage Temperature | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |