IKD06N60RATMA1 vs IGD06N60TATMA1 Vergleich
Detaillierter Direktvergleich von IKD06N60RATMA1 von Infineon und IGD06N60TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IKD06N60RATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $0,62 |
| Transistortyp | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | — |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | ±20 V |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | — |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Betriebstemperaturbereich | -40C to +150C (junction) | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK / TO-252) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Betriebs-Sperrschichttemperatur | — | -40 °C to +175 °C |
| Storage Temperature | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |