IKD06N60RATMA1 vs IGD06N60TATMA1 Comparaison
Comparaison détaillée côte à côte de IKD06N60RATMA1 par Infineon et IGD06N60TATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IKD06N60RATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,89 | $0,62 |
| Type de transistor | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | — |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | ±20 V |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | — |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Plage de température de fonctionnement | -40C to +150C (junction) | — |
| Boîtier | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK / TO-252) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 3 (2 + Tab) | — |
| Statut RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Température de jonction en fonctionnement | — | -40 °C to +175 °C |
| Storage Temperature | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |