IPB100N04S4H2ATMA1 vs IAUC100N04S6N022ATMA1 Comparación
Comparación detallada lado a lado de IPB100N04S4H2ATMA1 por Infineon y IAUC100N04S6N022ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ ActivoInfineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB100N04S4H2ATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,42 | $0,82 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Encapsulado | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8 (5x6 mm) leadless |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 (IAUC family) |
| RoHS Compliance | Compliant (Green Product) | — |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Power Dissipation (P_D, Tc) | — | 75 W |
| R_DS(on) (typ at V_GS=10V) | — | 2.2 mOhm |
| Rango de temperatura de funcionamiento | — | -55C to +175C (junction) |
| Polarity | — | N-Channel enhancement mode |
| Recuento de pines | — | 8 |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | [DATA_NEEDED: total gate charge] |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |