IPB100N04S4H2ATMA1 vs IAUC100N04S6N022ATMA1 Comparaison
Comparaison détaillée côte à côte de IPB100N04S4H2ATMA1 par Infineon et IAUC100N04S6N022ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ ActifInfineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPB100N04S4H2ATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,42 | $0,82 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Température de jonction en fonctionnement | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Boîtier | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8 (5x6 mm) leadless |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 (IAUC family) |
| RoHS Compliance | Compliant (Green Product) | — |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Power Dissipation (P_D, Tc) | — | 75 W |
| R_DS(on) (typ at V_GS=10V) | — | 2.2 mOhm |
| Plage de température de fonctionnement | — | -55C to +175C (junction) |
| Polarity | — | N-Channel enhancement mode |
| Nombre de broches | — | 8 |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | [DATA_NEEDED: total gate charge] |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |