IPB100N04S4H2ATMA1 vs IAUC100N04S6N022ATMA1 Сравнение
Подробное сравнение бок о бок IPB100N04S4H2ATMA1 от Infineon и IAUC100N04S6N022ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ АктивенInfineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPB100N04S4H2ATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,42 | $0,82 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Рабочая температура перехода | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Корпус | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8 (5x6 mm) leadless |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 (IAUC family) |
| RoHS Compliance | Compliant (Green Product) | — |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Power Dissipation (P_D, Tc) | — | 75 W |
| R_DS(on) (typ at V_GS=10V) | — | 2.2 mOhm |
| Диапазон рабочих температур | — | -55C to +175C (junction) |
| Polarity | — | N-Channel enhancement mode |
| Число выводов | — | 8 |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | [DATA_NEEDED: total gate charge] |
| Статус RoHS | — | Compliant |
| Lead-Free | — | Yes |