IPB100N04S4H2ATMA1 vs IAUT165N08S5N029ATMA2 Comparación
Comparación detallada lado a lado de IPB100N04S4H2ATMA1 por Infineon y IAUT165N08S5N029ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ ActivoInfineon
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | IPB100N04S4H2ATMA1 | IAUT165N08S5N029ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,42 | $2,30 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Encapsulado | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 Qualified |
| RoHS Compliance | Compliant (Green Product) | Green Product (RoHS compliant) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUT165N08S5N029ATMA2 |
| Product Family | — | OptiMOS™ 5 |
| Tipo de transistor | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 165 A |
| Pulsed Drain Current (I<sub>DM</sub>) | — | 660 A |
| On-Resistance (R<sub>DS(on)</sub>) | — | 2.9 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 167 W |
| Avalanche Energy (E<sub>AS</sub>) | — | 225 mJ |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (T<sub>j</sub>) |
| Encapsulado / Carcasa | — | PG-HSOF-8-1 (8+Tab, Surface Mount) |
| MSL Rating | — | MSL1 (up to 260 °C peak reflow) |
| Avalanche Tested | — | 100% Avalanche Tested |