IPB100N12S305ATMA2 vs IPC100N04S5L1R5ATMA1 Comparación
Comparación detallada lado a lado de IPB100N12S305ATMA2 por Infineon y IPC100N04S5L1R5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 ✓ ActivoInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB100N12S305ATMA2 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,95 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 120V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΩ) at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typ] |
| Maximum Junction Temperature | 175 °C | — |
| Avalanche Energy (EAS) | 1445 mJ | — |
| Encapsulado / Carcasa | PG-TO263-3-2 (D2PAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | -55C to +175C |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant (Green Product) |
| Nivel MSL | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Encapsulado | — | PG-TDSON-8-34 (SS08 leadless) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |