IPB100N12S305ATMA2 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IPB100N12S305ATMA2 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N12S305ATMA2 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 120V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Power Dissipation (PD) at Tc | 300 W | β |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΞ©) at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typ] |
| Maximum Junction Temperature | 175 Β°C | β |
| Avalanche Energy (EAS) | 1445 mJ | β |
| Package / Case | PG-TO263-3-2 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55C to +175C |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Package | β | PG-TDSON-8-34 (SS08 leadless) |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |