IPC100N04S5L1R5ATMA1 vs IAUS260N10S5N019TATMA1 Comparación
Comparación detallada lado a lado de IPC100N04S5L1R5ATMA1 por Infineon y IAUS260N10S5N019TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ ActivoInfineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPC100N04S5L1R5ATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $2,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 C to +175 C (Tj) |
| Encapsulado | PG-TDSON-8-34 (SS08 leadless) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (260C peak reflow) | — |
| AEC-Q101 Qualified | Yes | — |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Product Series | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| Recuento de pines | — | 16 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Technology | — | OptiMOS 5 trench-gate |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |