IPC100N04S5L1R5ATMA1 vs IAUS260N10S5N019TATMA1 对比
详细并排对比 IPC100N04S5L1R5ATMA1 出自 Infineon 和 IAUS260N10S5N019TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ 量产中规格对比
| 参数 | IPC100N04S5L1R5ATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $2.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| 工作温度范围 | -55C to +175C | -55 C to +175 C (Tj) |
| 封装 | PG-TDSON-8-34 (SS08 leadless) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (260C peak reflow) | — |
| AEC-Q101 Qualified | Yes | — |
| RoHS 状态 | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Product Series | — | OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| 引脚数量 | — | 16 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Technology | — | OptiMOS 5 trench-gate |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |