IPC100N04S5L1R5ATMA1 vs IAUS260N10S5N019TATMA1 비교
다음의 상세 나란히 비교: IPC100N04S5L1R5ATMA1 제조: Infineon 및 IAUS260N10S5N019TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ 활성사양 비교
| 파라미터 | IPC100N04S5L1R5ATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.18 | $2.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| 동작 온도 범위 | -55C to +175C | -55 C to +175 C (Tj) |
| 패키지 | PG-TDSON-8-34 (SS08 leadless) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL1 (260C peak reflow) | — |
| AEC-Q101 Qualified | Yes | — |
| RoHS 상태 | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Product Series | — | OptiMOS 5 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| 핀 수 | — | 16 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Technology | — | OptiMOS 5 trench-gate |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |