IPC70N04S5L4R2ATMA1 vs IPC100N04S5L1R1ATMA1 Comparación
Comparación detallada lado a lado de IPC70N04S5L4R2ATMA1 por Infineon y IPC100N04S5L1R1ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 ✓ ActivoInfineon
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPC70N04S5L4R2ATMA1 | IPC100N04S5L1R1ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,86 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Encapsulado | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (SS08 leadless) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (up to 260°C peak reflow) | MSL1 (unlimited floor life, 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | 100% avalanche tested |
| Estado RoHS | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Tipo de transistor | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 100 A |
| On-Resistance RDS(on) max | — | 1.1 mΩ |
| Power Dissipation (PD) at TC | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | Logic Level |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C |
| RoHS Compliance | — | Green Product (RoHS compliant) |