IPD052N10NF2SATMA1 vs BSC050N04LSGATMA1 Comparación
Comparación detallada lado a lado de IPD052N10NF2SATMA1 por Infineon y BSC050N04LSGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD052N10NF2SATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,55 | $0,41 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD052N10NF2SATMA1 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 100V | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 17 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 5.2 mΩ @ VGS=10V, ID=70A | — |
| Gate-Source Threshold Voltage (VGS(th)) Max | 3.8 V @ ID=84µA | — |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK, SC-63) | — |
| Supplier Device Package | PG-TO252-3 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55 °C to +175 °C (TJ) | — |
| Estado RoHS | Compliant | Compliant |
| Number of Channels | 1 | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Encapsulado | — | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| Nivel MSL | — | 1 |