IPD052N10NF2SATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPD052N10NF2SATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPD052N10NF2SATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPD052N10NF2SATMA1 | β |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 100V | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Ta | 17 A | β |
| Continuous Drain Current (ID) at Tc | 118 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 150 W | β |
| Drain-Source On-Resistance (RDS(on)) Max | 5.2 mΞ© @ VGS=10V, ID=70A | β |
| Gate-Source Threshold Voltage (VGS(th)) Max | 3.8 V @ ID=84Β΅A | β |
| Package / Case | PG-TO252-3 (DPAK, SC-63) | β |
| Supplier Device Package | PG-TO252-3 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (TJ) | β |
| RoHS Status | Compliant | Compliant |
| Number of Channels | 1 | β |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Package | β | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Operating Temperature Range | β | -55C to +150C |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |
| MSL Level | β | 1 |