IPD068N10N3GATMA1 vs IPD90N06S404ATMA2 Comparación
Comparación detallada lado a lado de IPD068N10N3GATMA1 por Infineon y IPD90N06S404ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPD068N10N3GATMA1 | IPD90N06S404ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,72 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD068N10N3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | OptiMOS |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| Encapsulado | PG-TO252-3 (DPAK, 2 leads + tab) | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| Estado RoHS | Compliant | Compliant (Green Product) |
| Nivel MSL | 1 | MSL1 |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 90 A |
| Power Dissipation (PD, Tc) | — | 150 W |
| On-Resistance (RDS(on)) | — | 3.8 mΩ (typ) at VGS = 10 V |
| Operating Temperature (TJ max) | — | 175 °C |
| Peak Reflow Temperature | — | 260 °C (MSL1) |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 |
| Polarity | — | Single N-Channel |