IPD60R145CFD7ATMA1 vs IPL60R060CFD7AUMA1 Comparación
Comparación detallada lado a lado de IPD60R145CFD7ATMA1 por Infineon y IPL60R060CFD7AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPD60R145CFD7ATMA1 | IPL60R060CFD7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $4,03 |
| FET Type | N-Channel | — |
| Technology | CoolMOS CFD7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Encapsulado | TO-252AA (DPAK) surface mount | PG-VSON-4-1 (Surface Mount) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Temperatura de funcionamiento | -55C to +150C (junction) | — |
| Tipo de montaje | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Series | CoolMOS CFD7 | CoolMOS™ CFD7 |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Estado RoHS | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Manufacturer | — | Infineon Technologies |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Power Dissipation (P_D, Tc) | — | 219 W |
| R_DS(on) (max) at V_GS = 10 V | — | 60 mΩ |
| R_DS(on) (typ, datasheet) | — | 48 mΩ |
| Gate Charge (Q_G, typ) at V_GS = 10 V | — | 79 nC |
| Input Capacitance (C_iss) | — | 3193 pF |
| Output Capacitance (C_oss) | — | 62 pF |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | — | 4.5 V |
| Rango de temperatura de funcionamiento | — | -40 °C to +150 °C |